1.55 ?m spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy

Microwave and Optical Technology Letters ◽

10.1002/(sici)1098-2760(20000605)25:5<300::aid-mop4>3.0.co;2-s ◽

2000 ◽

Vol 25 (5) ◽

pp. 300-302 ◽

Author(s):

Hyun-Soo Kim ◽

Dae Kon Oh ◽

Moon-Ho Park ◽

Nam Hwang ◽

In-Hoon Choi

Keyword(s):

Laser Diode ◽

Vapor Phase ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205438 ◽

2003 ◽

Author(s):

T. Tsuchiya ◽

J. Shimizu ◽

M. Shirai ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Inp Substrate ◽

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A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1992665 ◽

2005 ◽

Vol 87 (3) ◽

pp. 033501 ◽

Author(s):

Yoshihito Miyoshi ◽

Fumito Nakajima ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Binary Decision Diagram ◽

Single Electron ◽

Single Electron Transistors ◽

Binary Decision ◽

Selective Area ◽

Electron Transistors

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Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.025502 ◽

2013 ◽

Vol 6 (2) ◽

pp. 025502 ◽

Author(s):

Yoshinori Kohashi ◽

Shinya Sakita ◽

Shinjiroh Hara ◽

Junichi Motohisa

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Nanowire Arrays ◽

Independent Realization ◽

Selective Area ◽

Growth Method ◽

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Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications

Applied Surface Science ◽

10.1016/s0169-4332(01)00888-1 ◽

2002 ◽

Vol 190 (1-4) ◽

pp. 184-190 ◽

Author(s):

J. Motohisa ◽

F. Nakajima ◽

T. Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.105501 ◽

2013 ◽

Vol 6 (10) ◽

pp. 105501 ◽

Author(s):

Tetsuya Akasaka ◽

Yasuyuki Kobayashi ◽

Makoto Kasu ◽

Hideki Yamamoto

Keyword(s):

Vapor Phase ◽

Growth Rates ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Spiral Growth ◽

Carrier Gas ◽

Selective Area ◽

Evaporation Energy

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Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.12.048 ◽

2008 ◽

Vol 310 (7-9) ◽

pp. 2359-2364 ◽

Author(s):

Takuya Sato ◽

Junichi Motohisa ◽

Jinichiro Noborisaka ◽

Shinjiro Hara ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1593823 ◽

2003 ◽

Vol 83 (4) ◽

pp. 689-691 ◽

Author(s):

Premila Mohan ◽

Fumito Nakajima ◽

Masashi Akabori ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Lattice Structure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Kagome Lattice ◽

Kagomé Lattice ◽

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1-bit BDD full adder circuit using single electron transistors by selective area metalorganic vapor phase epitaxy

10.7567/ssdm.2003.e-5-4 ◽

2003 ◽

Author(s):

Y. Miyoshi ◽

F. Nakajima ◽

J. Motohisa ◽

T. Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Single Electron ◽

Single Electron Transistors ◽

Selective Area ◽

Electron Transistors

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